1234567McGaughey, Steve (April 26, 2006). "Hess leaves a huge legacy at Beckman, UIUC". Beckman Institute. Retrieved 20 October 2017.
123Brown, Theodore L. (2009). Bridging divides: the origins of the Beckman Institute at Illinois. Urbana: University of Illinois. ISBN978-0252034848. Retrieved 11 December 2014.
123456McGaughey, Steve (January 1, 2005). "Hess nominated for National Science Board". ECE Illinois News. Retrieved 19 October 2017.
12"Professor Emeritus Karl Hess". Center for Advanced Study. Archived from the original on 4 May 2017. Retrieved 20 October 2017.
12345Arakawa, Yasuhiko (2002). Compound semiconductors 2001: proceedings of the Twenty-eighth International Symposium on Compound Semiconductors held in Tokyo, Japan, 1–4 October 2001. Bristol, U.K.: IoP Publ. p.vii. ISBN9780750308564. Retrieved 20 October 2017.
↑Seeger, Karlheinz; Hess, Karl F. (15 March 2005). "Momentum and energy relaxation of warm carriers in semiconductors". Zeitschrift für Physik A. 237 (3): 252–262. Bibcode:1970ZPhy..237..252S. doi:10.1007/BF01398639. S2CID122290758.
↑Hess, K.; Morkoç, H.; Shichijo, H.; Streetman, B. G. (15 September 1979). "Negative differential resistance through real-space electron transfer". Applied Physics Letters. 35 (6): 469–471. Bibcode:1979ApPhL..35..469H. doi:10.1063/1.91172.
123Bell, Trudy E. (1 Nov 1999). "The Beckman Institute for Advanced Science and Technology 'Two heads are better than one' is an adage honored by this research institute, where multidisciplinary collaboration is an art". IEEE Spectrum. Retrieved 20 October 2017.
↑Hess, K.; Leburton, J. P.; Ravaioli, U. (1991). Computational Electronics Semiconductor Transport and Device Simulation. Boston, MA: Springer US. ISBN978-1-4757-2124-9.
↑Hess, K.; Register, L. F.; Tuttle, B.; Lyding, J.; Kizilyalli, I. C. (October 1998). "Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime". Physica E: Low-dimensional Systems and Nanostructures. 3 (1–3): 1–7. Bibcode:1998PhyE....3....1H. doi:10.1016/S1386-9477(98)00211-2.
↑Kizilyalli, I. C.; Lyding, J. W.; Hess, K. (March 1997). "Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability". IEEE Electron Device Letters. 18 (3): 81–83. Bibcode:1997IEDL...18...81K. doi:10.1109/55.556087. S2CID13207342. Retrieved 23 October 2017.
123Hess, Karl (1998). "Multi-Scale Approach to Semiconductor Device Simulation Combining Semi-classical and Quantum Regions"(PDF). DTIC. Retrieved 20 October 2017.
↑"What is spooky action at a distance?". The Economist. March 16, 2017. Retrieved 20 October 2017.
↑Hess, K.; Philipp, W. (27 November 2001). "Bell's theorem and the problem of decidability between the views of Einstein and Bohr". Proceedings of the National Academy of Sciences. 98 (25): 14228–14233. Bibcode:2001PNAS...9814228H. doi:10.1073/pnas.251525098. PMC64664. PMID11724942.
↑Ball, Philip (29 November 2001). "Exorcising Einstein's spooks Is there another layer of reality beyond quantum physics?". Nature. doi:10.1038/news011129-15. Retrieved 20 October 2017.